Name: IRLML6246TRPBF
Brand: Infineon Technologies
SKU: IRLML6246TRPBF
Price: 0.58000 USD
Availability: InStock

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IRLML6246TRPBF

Manufacturer part number:IRLML6246TRPBF

Manufacturer:Infineon Technologies

Description:IRLML6246TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRLML6246TRPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	46MOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Power Dissipation-Max	1.3W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.3W
Turn On Delay Time	3.6 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	46m Ω @ 4.1A, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 5μA
Input Capacitance (Ciss) (Max) @ Vds	290pF @ 16V
Current - Continuous Drain (Id) @ 25°C	4.1A Ta
Gate Charge (Qg) (Max) @ Vgs	3.5nC @ 4.5V
Rise Time	4.9ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	11 ns
Continuous Drain Current (ID)	4.1A
Threshold Voltage	12V
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	20V
Recovery Time	13 ns
Height	1.016mm
Length	3.0226mm
Width	1.397mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

IRLML6246TRPBF Product Details

IRLML6246TRPBF Description

IRLML6246TRPBF is a kind of P-channel MOSFET that is designed based on advanced processing techniques for the purpose of making extremely low on-resistance per silicon area possible. Moreover, IRLML6246TRPBF is designed with the characteristics that HEXFET? power MOSFETs provide, including fast switching speed and ruggedized device design. All of these make the device more efficient and reliable for use in battery and load management.