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IPB80P04P4L04ATMA1

IPB80P04P4L04ATMA1

IPB80P04P4L04ATMA1

Infineon Technologies

Trans MOSFET P-CH 40V 80A 3-Pin(2+Tab) TO-263

SOT-23

IPB80P04P4L04ATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2011
Series Automotive, AEC-Q101, OptiMOS™
JESD-609 Code e3
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureLOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 125W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation125W
Case Connection DRAIN
Turn On Delay Time28 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 4.4m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 176nC @ 10V
Rise Time13ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 65 ns
Turn-Off Delay Time 119 ns
Continuous Drain Current (ID) -80A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage-40V
Drain-source On Resistance-Max 0.0071Ohm
Drain to Source Breakdown Voltage -40V
Avalanche Energy Rating (Eas) 60 mJ
Height 4.4mm
Length 10mm
Width 9.25mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:3136 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$9.555287$9.555287
10$9.014421$90.14421
100$8.504172$850.4172
500$8.022803$4011.4015
1000$7.568682$7568.682

About IPB80P04P4L04ATMA1

The IPB80P04P4L04ATMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET P-CH 40V 80A 3-Pin(2+Tab) TO-263.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPB80P04P4L04ATMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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