Name: IRLML2402TR
Brand: Infineon Technologies
SKU: IRLML2402TR
Availability: InStock

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IRLML2402TR

Manufacturer part number:IRLML2402TR

Manufacturer:Infineon Technologies

Description:IRLML2402TR datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRLML2402TR Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Transistor Element Material	SILICON
Packaging	Cut Tape (CT)
Published	2003
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-G3
Qualification Status	Not Qualified
Operating Temperature (Max)	150°C
Operating Temperature (Min)	-55°C
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	250m Ω @ 930mA, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	110pF @ 15V
Current - Continuous Drain (Id) @ 25°C	1.2A Ta
Gate Charge (Qg) (Max) @ Vgs	3.9nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
JEDEC-95 Code	TO-236AB
Drain Current-Max (Abs) (ID)	1.2A
Drain-source On Resistance-Max	0.25Ohm
DS Breakdown Voltage-Min	20V
Power Dissipation-Max (Abs)	0.54W
RoHS Status	Non-RoHS Compliant

IRLML2402TR Product Details

IRLML2402TR Description

The IRLML2402PBF is an N-channel HEXFET? Power MOSFET with lower switch losses and increased reliability. The Infineon IRLML2402PBF utilizes advanced processing techniques to achieve extremely low on-resistant per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.