IRF5305LPBF Description
The IRF5305LPBF power MOSFETs employ tried-and-true silicon manufacturing techniques, providing designers with a broad range of products to serve several applications, including battery-powered devices, DC motors, and inverters, SMPS, lighting, load switches, and illumination. For ease of design, IRF5305LPBF MOSFETs come in a choice of surface mount and through-hole packages with standardized industry footprints.
IRF5305LPBF Features
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 110 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 31 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 63 nC
Rise Time (tr): 66 nS
Drain-Source Capacitance (Cd): 520 pF
Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm
Package: TO-262
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry-standard through-hole power package
High-current rating
IRF5305LPBF Applications
Transistors, etc.
Battery Operated Systems
Power Supply, Converter Circuits
Motor Control
Fast Switching Applications
Motor Control Applications
