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IRLI520N

IRLI520N

IRLI520N

Infineon Technologies

IRLI520N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRLI520N Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 1998
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 30W Tc
Operating ModeENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8.1A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±16V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 8.1A
Drain-source On Resistance-Max 0.22Ohm
Pulsed Drain Current-Max (IDM) 35A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 85 mJ
RoHS StatusNon-RoHS Compliant
In-Stock:2249 items

IRLI520N Product Details

IRLI520N Description


The IRLI520N is a HEXFET? fifth-generation N-channel Power MOSFET utilizing advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides a highly efficient and reliable operation. The package eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100 micron mica barrier.



IRLI520N Features


  • Logic level gate drive

  • Advanced process technology

  • Isolated package

  • Fully avalanche rating

  • Low static drain-to-source ON-resistance

  • Logic level



IRLI520N Applications


  • Induction furnaces

  • Arc furnaces and arc welders

  • Steel rolling mills

  • Large motors with periodic loading

  • Thyristor drives

  • Commercial

  • Industrial


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