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IPB10N03LB G

IPB10N03LB G

IPB10N03LB G

Infineon Technologies

MOSFET N-CH 30V 50A D2PAK

SOT-23

IPB10N03LB G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2005
Series OptiMOS™
Part StatusObsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 58W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.6m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 20μA
Input Capacitance (Ciss) (Max) @ Vds 1639pF @ 15V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
In-Stock:1898 items

About IPB10N03LB G

The IPB10N03LB G from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 30V 50A D2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPB10N03LB G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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