Name: IRLBA3803P
Brand: Infineon Technologies
SKU: IRLBA3803P
Availability: InStock

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IRLBA3803P

Manufacturer part number:IRLBA3803P

Manufacturer:Infineon Technologies

Description:IRLBA3803P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRLBA3803P Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-273AA
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2002
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	MATTE TIN OVER NICKEL
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	250
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	270W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5m Ω @ 71A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	179A Tc
Gate Charge (Qg) (Max) @ Vgs	140nC @ 4.5V
Drain to Source Voltage (Vdss)	30V
Drain Current-Max (Abs) (ID)	179A
Drain-source On Resistance-Max	0.005Ohm
Pulsed Drain Current-Max (IDM)	720A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	610 mJ
RoHS Status	Non-RoHS Compliant

IRLBA3803P Product Details

IRLBA3803P Description

IRLBA3803P is a HEXFET? Power MOSFET manufactured by Infineon. The Infineon IRLBA3803P utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFETPower MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.