IRL3705ZS Description
The incredibly low on-resistance per silicon area of this HEXFET? Power MOSFET is made possible by the use of cutting-edge manufacturing processes. A 175°C junction operating temperature, quick switching, and increased repeating avalanche rating are other characteristics of this design. These characteristics work together to provide a highly effective and dependable gadget that may be used in a wide range of applications.
IRL3705ZS Features
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
IRL3705ZS Applications
Power Management
Consumer Electronics
Portable Devices
Industrial