Name: IRL610A
Brand: ON Semiconductor
SKU: IRL610A
Availability: InStock

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IRL610A

Manufacturer part number:IRL610A

Manufacturer:ON Semiconductor

Description:IRL610A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:IRL610A Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1999
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Current Rating	3.3A
Power Dissipation-Max	33W Tc
Element Configuration	Single
Power Dissipation	33W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.5Ohm @ 1.65A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	240pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.3A Tc
Gate Charge (Qg) (Max) @ Vgs	9nC @ 5V
Rise Time	9ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±20V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	3.3A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Input Capacitance	240pF
Drain to Source Resistance	1.5Ohm
Rds On Max	1.5 Ω
RoHS Status	RoHS Compliant
Lead Free	Lead Free

IRL610A Product Details

IRL610A Description

The IRL610A is a 200V N-channel Power MOSFET, a third-generation power MOSFET that provides the designer with the best combination of fast switching, ruggedized device design, and low on-resistance. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 33W. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor IRL610A is in the TO-220-3 package with 33W power dissipation.