Name: IRGI4086PBF
Brand: Infineon Technologies
SKU: IRGI4086PBF
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Supplier Device Package	TO-220AB Full-Pak
Operating Temperature	-40°C~150°C TJ
Packaging	Tube
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Max Power Dissipation	43W
Element Configuration	Single
Power Dissipation	43W
Input Type	Standard
Power - Max	43W
Collector Emitter Voltage (VCEO)	2.96V
Max Collector Current	25A
Collector Emitter Breakdown Voltage	300V
Voltage - Collector Emitter Breakdown (Max)	300V
Current - Collector (Ic) (Max)	25A
Collector Emitter Saturation Voltage	1.55V
Test Condition	196V, 25A, 10Ohm
Vce(on) (Max) @ Vge, Ic	2.96V @ 15V, 120A
IGBT Type	Trench
Gate Charge	65nC
Td (on/off) @ 25°C	36ns/112ns
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant

IRGI4086PBF Product Details

IRGI4086PBF Description

IRGI4086PBF is a 300v PDP trench IGBT. This IGBT IRGI4086PBF is specifically designed for applications in Plasma Display Panels. This transistor IRGI4086PBF utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improves panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IRGI4086PBF a highly efficient, robust, and reliable device for PDP applications.