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IRGB6B60KPBF

IRGB6B60KPBF

IRGB6B60KPBF

Infineon Technologies

IRGB6B60KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGB6B60KPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2004
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
Voltage - Rated DC 600V
Max Power Dissipation90W
Current Rating13A
Number of Elements 1
Element ConfigurationSingle
Power Dissipation90W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time17ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 13A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage1.8V
Turn On Time45 ns
Test Condition 400V, 5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 5A
Turn Off Time-Nom (toff) 258 ns
IGBT Type NPT
Gate Charge18.2nC
Current - Collector Pulsed (Icm) 26A
Td (on/off) @ 25°C 25ns/215ns
Switching Energy 110μJ (on), 135μJ (off)
Height 8.77mm
Length 10.54mm
Width 4.69mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2787 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.553659$0.553659
10$0.522320$5.2232
100$0.492755$49.2755
500$0.464863$232.4315
1000$0.438550$438.55

IRGB6B60KPBF Product Details

IRGB6B60KPBF Description


IRGB6B60KPBF manufactured by Infineon Technologies is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is used to provide benchmark efficiency in motor control. Excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient and tighter distribution of parameters. It is able to provide low VCE (on) non-punch through IGBT technology. Moreover, the IRGB6B60KPBF IGBT delivers rugged transient performance and low EMI.



IRGB6B60KPBF Features


Low EMI

10μs short circuit capability

Square RBSOA

Ultrasoft diode reverse recovery characteristics

Positive VCE (on) temperature coefficient



IRGB6B60KPBF Applications


UPS

Motor control


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