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IRGC4062B

IRGC4062B

IRGC4062B

Infineon Technologies

IRGC4062B datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGC4062B Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case Die
Surface MountYES
Transistor Element Material SILICON
Operating Temperature175°C TJ
PackagingBulk
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Position UPPER
Terminal FormNO LEAD
JESD-30 Code R-XUUC-N2
Number of Elements 1
Configuration SINGLE
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 24A
IGBT Type Trench
Gate-Emitter Thr Voltage-Max 6.5V
RoHS StatusROHS3 Compliant
In-Stock:1258 items

IRGC4062B Product Details

IRGC4062B Description


The Infineon Technologies IRGC4062B is an insulated gate bipolar transistor with an ultrafast soft healing diode used in Low VCE (ON) Trench IGBT technology.



IRGC4062B Features


  • Low VCE (ON) Trench IGBT Technology

  • Low switching losses

  • Maximum Junction temperature 175 °C

  • 5 μS short circuit SOA

  • Square RBSOA

  • 100% of the parts tested for ILM

  • Positive VCE (ON) Temperature coefficient

  • Ultra-fast soft Recovery Co-Pak Diode

  • Tight parameter distribution

  • Lead-Free Package



IRGC4062B Applications


  • Wide range of applications


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