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IRGB4062DPBF

IRGB4062DPBF

IRGB4062DPBF

Infineon Technologies

IRGB4062DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGB4062DPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 26 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2006
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation250W
Number of Elements 1
Element ConfigurationSingle
Power Dissipation250W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time53 ns
Transistor Application POWER CONTROL
Rise Time22ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 115 ns
Collector Emitter Voltage (VCEO) 1.95V
Max Collector Current 48A
Reverse Recovery Time 89 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage1.65V
Turn On Time64 ns
Test Condition 400V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 24A
Turn Off Time-Nom (toff) 164 ns
IGBT Type Trench
Gate Charge50nC
Current - Collector Pulsed (Icm) 72A
Td (on/off) @ 25°C 41ns/104ns
Switching Energy 115μJ (on), 600μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 41ns
Height 9.02mm
Length 10.6426mm
Width 4.82mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1839 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.33000$5.33
50$4.52260$226.13
100$3.91950$391.95
500$3.33662$1668.31

IRGB4062DPBF Product Details

IRGB4062DPBF Description


Due to low VCE (ON) and switching losses, IRGB4062DPBF is High Efficiency in a wide variety of applications and Suitable for a wide range of switching frequencies.



IRGB4062DPBF Features

? Trench IGBT Technology with Low VCE (ON)

? Switching losses are minimal.

? 175°C maximum junction temperature

? Short circuit of 5 seconds SOA

? RBSOA square

? Every single part was tested for ILM.

? Positive temperature co-efficient VCE (ON)

? Co-Pak Diode with ultra-fast soft recovery

? An even distribution of parameters

? Package without lead


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