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IRG7PH50UPBF

IRG7PH50UPBF

IRG7PH50UPBF

Infineon Technologies

IRG7PH50UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG7PH50UPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2004
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation556W
Number of Elements 1
Rise Time-Max 60ns
Element ConfigurationSingle
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time35 ns
Power - Max 556W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 430 ns
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 140A
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage1.7V
Turn On Time75 ns
Test Condition 600V, 50A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A
Turn Off Time-Nom (toff) 710 ns
IGBT Type Trench
Gate Charge290nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 35ns/430ns
Switching Energy 3.6mJ (on), 2.2mJ (off)
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 65ns
Height 20.7mm
Length 15.87mm
Width 5.31mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:1177 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$12.42000$12.42

IRG7PH50UPBF Product Details

IRG7PH50UPBF Description


The IRG7PH50UPBF hashigh efficiency in a wide range of applications.It is suitable for a wide range of switching frequencies due tolow VCE (ON) and low switching losses.This device is rugged transient performance for increased reliability and excellent current sharing in parallel operation.


IRG7PH50UPBF Features


? Low VCE (ON) trench IGBT technology

? Low switching losses

? Maximum junction temperature 175 °C

? Square RBSOA

? 100% of the parts tested for ILM

? Positive VCE (ON) temperature co-efficient

? Tight parameter distribution

? Lead -Free

IRG7PH50UPBF Applications


? U.P.S

? Welding

? Solar inverter

? Induction heating


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