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SIGC57T120R3LEX1SA3

SIGC57T120R3LEX1SA3

SIGC57T120R3LEX1SA3

Infineon Technologies

SIGC57T120R3LEX1SA3 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SIGC57T120R3LEX1SA3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case Die
PackagingBulk
Published 2014
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature150°C
Min Operating Temperature -40°C
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Input Type Standard
Drain to Source Voltage (Vdss) 1.2kV
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Dual Supply Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 150A
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
RoHS StatusROHS3 Compliant
In-Stock:2881 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$11.14000$11.14

SIGC57T120R3LEX1SA3 Product Details

SIGC57T120R3LEX1SA3 Description


IGBTs are widely used as switching devices in the inverter circuit (for DC-to-AC conversion) for driving small to large motors. IGBTs for inverter applications are used in home appliances such as air conditioners and refrigerators, industrial motors, and automotive main motor controllers to improve their efficiency.




SIGC57T120R3LEX1SA3 Features


· 1200V trench & field stop technology

· Low turn-off losses

· Short tail current

· Positive temperature coefficient

· Easy paralleling

SIGC57T120R3LEX1SA3 Applications

· Drives


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