IGC70T120T8RQ Description
IGC70T120T8RQ transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IGC70T120T8RQ MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IGC70T120T8RQ has the common source configuration.
IGC70T120T8RQ Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IGC70T120T8RQ Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
