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IRG4IBC30FD

IRG4IBC30FD

IRG4IBC30FD

Infineon Technologies

IRG4IBC30FD datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4IBC30FD Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 1999
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Power - Max 45W
Reverse Recovery Time 42ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 20.3A
Test Condition 480V, 17A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A
Gate Charge51nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 42ns/230ns
Switching Energy 630μJ (on), 1.39mJ (off)
RoHS StatusNon-RoHS Compliant
In-Stock:3969 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.146151$5.146151
10$4.854860$48.5486
100$4.580057$458.0057
500$4.320808$2160.404
1000$4.076234$4076.234

IRG4IBC30FD Product Details

IRG4IBC30FD Description

IGBT (insulated gate bipolar transistor) provides a high switching speed necessary for PWM VFD operation. IGBTs are capable of switching on and off several thousand times a second. A VFD IGBT can turn on in less than 400 nanoseconds and off in approximately 500 nanoseconds.



IRG4IBC30FD Features


? Very Low 1.59V votage drop

? 2.5kV, 60s insulation voltage …

? 4.8 mm creapage distance to heatsink

? Fast: Optimized for medium operating

frequencies ( 1-5 kHz in hard switching, >20

kHz in resonant mode).

? IGBT co-packaged with HEXFREDTM ultrafast,

ultrasoft recovery antiparallel diodes

? Tighter parameter distribution

? Industry standard Isolated TO-220 FullpakTM

Outline

IRG4IBC30FD Applications


Desktop PC power supplies for

Next-generation AMD processors

Voltage regulator modules (VRM)


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