Name: IRG4BC10SD-S
Brand: Infineon Technologies
SKU: IRG4BC10SD-S
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2001
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	TIN LEAD
Additional Feature	LOW CONDUCTION LOSS
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	225
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	38W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Reverse Recovery Time	28ns
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	14A
Turn On Time	106 ns
Test Condition	480V, 8A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 8A
Turn Off Time-Nom (toff)	1780 ns
Gate Charge	15nC
Current - Collector Pulsed (Icm)	18A
Td (on/off) @ 25°C	76ns/815ns
Switching Energy	310μJ (on), 3.28mJ (off)
RoHS Status	Non-RoHS Compliant

IRG4BC10SD-S Product Details

IRG4BC10SD-S Description

IRG4BC10SD-S is a 600V insulated gate bipolar transistor with an ultrafast soft recovery diode. It is applied to many fields, like Automotive Advanced driver assistance systems (ADAS) Enterprise systems Datacenter & enterprise computing Personal electronics Home theater & entertainment. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG4BC10SD-S is in the TO‐220AB package with 38W power dissipation.