IRFS4229PBF Description
This HEXFET power MOSFET is designed for sustainable energy recovery and switching applications in plasma display panels. This MOSFET uses the latest technology to achieve low silicon area on-resistance and low power consumption. In addition, the MOSFET also has the ability of 175 °working junction temperature and high repetitive peak current. The combination of these features makes the MOSFET an efficient, rugged and reliable device in PDP-driven applications.
IRFS4229PBF Features
Advanced Process Technology
Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
Low QG for Fast Response
High Repetitive Peak Current Capability for
Reliable Operation
Short Fall & Rise Times for Fast Switching
175°C Operating Junction Temperature for
Improved Ruggedness
Repetitive Avalanche Capability for Robustness
and Reliability
IRFS4229PBF Applications
switching applications
