Name: MTD6N20ET4G
Brand: ON Semiconductor
SKU: MTD6N20ET4G
Availability: InStock

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MTD6N20ET4G

Manufacturer part number:MTD6N20ET4G

Manufacturer:ON Semiconductor

Description:MTD6N20ET4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MTD6N20ET4G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	460MOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	6A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	1.75W Ta 50W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	50W
Case Connection	DRAIN
Turn On Delay Time	8.8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	700m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	480pF @ 25V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Rise Time	29ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	6A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	6A
Drain to Source Breakdown Voltage	200V
Dual Supply Voltage	200V
Avalanche Energy Rating (Eas)	54 mJ
Nominal Vgs	3 V
Height	2.38mm
Length	6.73mm
Width	6.8mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free

MTD6N20ET4G Product Details

MTD6N20ET4G Description

High energy can be withstood by this cutting-edge Power MOSFET in both avalanche and commutation modes. Another feature of the new energy-efficient design is a drain-to-source diode with a quick recovery period. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls.

MTD6N20ET4G Features

Avalanche Energy Specified
Source?to?Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
These Devices are Pb?Free and are RoHS Compliant