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IRFS4115PBF

IRFS4115PBF

IRFS4115PBF

Infineon Technologies

IRFS4115PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFS4115PBF Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2008
Series HEXFET®
JESD-609 Code e3
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 12.1MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 375W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation375W
Case Connection DRAIN
Turn On Delay Time18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12.1m Ω @ 62A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5270pF @ 50V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time73ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 39 ns
Turn-Off Delay Time 41 ns
Continuous Drain Current (ID) 99A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Dual Supply Voltage 150V
Nominal Vgs 5 V
Height 4.826mm
Length 10.668mm
Width 9.65mm
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3506 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.20000$5.2
10$4.64700$46.47
100$3.81040$381.04
500$3.08552$1542.76

IRFS4115PBF Product Details

IRFS4115PBF Description


IRFS4115PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 150V. The operating temperature of IRFS4115PBF is -55°C~175°C TJ and its maximum power dissipation is 375W. IRFS4115PBF has 3 pins and it is available in TO-263-3, D2Pak (2 Leads + Tab), and TO-263AB packaging way. The Turn-On Delay Time of IRFS4115PBF is 18 ns and its Turn-Off Delay Time is 41 ns.



IRFS4115PBF Features


  • Improved Gate, Avalanche, and Dynamic dV/dt Ruggedness

  • Fully Characterized Capacitance and Avalanche SOA

  • Enhanced body diode dV/dt and dI/dt Capability

  • Lead-Free



IRFS4115PBF Applications


  • High-Efficiency Synchronous Rectification in SMPS

  • Uninterruptible Power Supply

  • High-Speed Power Switching

  • Hard Switched and High-Frequency Circuits


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