Name: IRFS3206PBF
Brand: Infineon Technologies
SKU: IRFS3206PBF
Availability: InStock

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IRFS3206PBF

Manufacturer part number:IRFS3206PBF

Manufacturer:Infineon Technologies

Description:IRFS3206PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFS3206PBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2007
Series	HEXFET®
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Current Rating	210A
Power Dissipation-Max	300W Tc
Element Configuration	Single
Power Dissipation	300mW
Turn On Delay Time	19 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	6540pF @ 50V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	170nC @ 10V
Rise Time	82ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	83 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	210A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Recovery Time	50 ns
Height	4.826mm
Length	10.67mm
Width	9.65mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

IRFS3206PBF Product Details

IRFS3206PBF Description

The IRFS3206PBF is a single N-channel HEXFET ^?Power MOSFET with increased gate, avalanche, and dynamic dV/dt toughness. It is appropriate for high-efficiency synchronous rectification in SMPS, hard-switched, and high-frequency circuits.