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IRF6609TRPBF

IRF6609TRPBF

IRF6609TRPBF

Infineon Technologies

MOSFET N-CH 20V 31A DIRECTFET

SOT-23

IRF6609TRPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MT
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature-40°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
Series HEXFET®
JESD-609 Code e1
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional FeatureLOW CONDUCTION LOSS
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating31A
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.8W Ta 89W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation89W
Case Connection DRAIN
Turn On Delay Time24 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2m Ω @ 31A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6290pF @ 10V
Current - Continuous Drain (Id) @ 25°C 31A Ta 150A Tc
Gate Charge (Qg) (Max) @ Vgs 69nC @ 4.5V
Rise Time95ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9.8 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 150mA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.002Ohm
Drain to Source Breakdown Voltage 20V
Avalanche Energy Rating (Eas) 240 mJ
Height 506μm
Length 6.35mm
Width 5.05mm
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2785 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.714324$1.714324
10$1.617287$16.17287
100$1.525742$152.5742
500$1.439379$719.6895
1000$1.357905$1357.905

About IRF6609TRPBF

The IRF6609TRPBF from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 20V 31A DIRECTFET.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF6609TRPBF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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