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IRFR3710ZTRLPBF

IRFR3710ZTRLPBF

IRFR3710ZTRLPBF

Infineon Technologies

IRFR3710ZTRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFR3710ZTRLPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2006
Series HEXFET®
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 140W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 33A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2930pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 42A
Drain-source On Resistance-Max 0.018Ohm
Pulsed Drain Current-Max (IDM) 220A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 150 mJ
RoHS StatusROHS3 Compliant
In-Stock:3010 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.483509$1.483509
10$1.399537$13.99537
100$1.320318$132.0318
500$1.245583$622.7915
1000$1.175078$1175.078

IRFR3710ZTRLPBF Product Details

IRFR3710ZTRLPBF Description


IRFR3710ZTRLPBF is a 100v Single N-Channel HEXFET Power MOSFET. International Rectifier's logic level gate drive trench HEXFET? power MOSFETs feature benchmark on-state resistance (RDS(on)) and high package current ratings for high power DC motors, power tools, industrial batteries, and power supply applications. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor IRFR3710ZTRLPBF is in the TO-252-3 package with 140W power dissipation.



IRFR3710ZTRLPBF Features


  • HEXFET? power MOSFET

  • Advanced process technology

  • Ultra-low on-resistance

  • 175°C operating temperature

  • Fast switching

  • Repetitive avalanche allowed up to Tjmax



IRFR3710ZTRLPBF Applications


  • DC motor drive

  • High-efficiency synchronous rectification in SMPS

  • Uninterruptible power supply

  • High-speed power switching

  • Hard switched and high-frequency circuits


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