STL4N80K5 Description
This very high voltage N-channel Power MOSFET is designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency
STL4N80K5 Features
Industry's lowest RDS(on) x area
Industry's best figure of merit (FoM)
Ultra low gate charge
100% avalanche tested
Zener protected
STL4N80K5 Applications
Switching applications
