SCTH40N120G2V7AG Description
This silicon carbide power MOSFET device is developed using advanced and innovative second generation silicon carbide MOSFET technology from STMicroelectronics. The device has extremely low on-resistance per unit area and very good switching performance. The change of switching loss has almost nothing to do with the junction temperature.
SCTH40N120G2V7AG Features
? AEC-Q101 qualified
? Very fast and robust intrinsic body diode
? Extremely low gate charge and input capacitance
? Source sensing pin for increased efficiency
SCTH40N120G2V7AG Applications
? Main inverter (electric traction)
? DC/DC converter for EV/HEV
? On board charger (OBC)
