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BSC030P03NS3GAUMA1

BSC030P03NS3GAUMA1

BSC030P03NS3GAUMA1

Infineon Technologies

BSC030P03NS3GAUMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

BSC030P03NS3GAUMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2005
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormFLAT
Pin Count8
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.5W Ta 125W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation2.5W
Case Connection DRAIN
Turn On Delay Time27 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3.1V @ 345μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 14000pF @ 15V
Current - Continuous Drain (Id) @ 25°C 25.4A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 186nC @ 10V
Rise Time105ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±25V
Fall Time (Typ) 33 ns
Turn-Off Delay Time 98 ns
Continuous Drain Current (ID) -25.4A
Gate to Source Voltage (Vgs) 25V
Max Dual Supply Voltage-30V
Drain-source On Resistance-Max 0.0046Ohm
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 345 mJ
Max Junction Temperature (Tj) 150°C
Height 1.1mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:1979 items

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BSC030P03NS3GAUMA1 Product Details

BSC030P03NS3GAUMA1 Description

The transistorBSC030P03NS3GAUMA1used to control high voltage and current is the power transistor (BJT). It is also known as a voltage-current control device and operates in four regions: cut-off, active, quasi-saturated and hard-saturated according to the power supply provided to the transistor.


BSC030P03NS3GAUMA1Applications


voltage-current control device


BSC030P03NS3GAUMA1 Features


cut-off, active

quasi-saturated

hard-saturated

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