IRFP054N Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-21 8 package because of its isolated mounting
IRFP054N Features
Advanced Process Technology
Dynamic dvldt Rating
175??C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
