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DMN3115UDM-7

DMN3115UDM-7

DMN3115UDM-7

Diodes Incorporated

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 60m Ω @ 6A, 4.5V ±8V 476pF @ 15V SOT-23-6

SOT-23

DMN3115UDM-7 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional FeatureLOW THRESHOLD
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 900mW Ta
Operating ModeENHANCEMENT MODE
Power Dissipation900mW
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 476pF @ 15V
Current - Continuous Drain (Id) @ 25°C 3.2A Ta
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Continuous Drain Current (ID) 3.2A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 3.22A
Drain to Source Breakdown Voltage 30V
Height 1.1mm
Length 3mm
Width 1.6mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:2318 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.396477$0.396477
10$0.374035$3.74035
100$0.352863$35.2863
500$0.332889$166.4445
1000$0.314047$314.047

DMN3115UDM-7 Product Details

DMN3115UDM-7 Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 476pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 3.2A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.3.22A is the drain current of this device, which is the maximum continuous current transistor can carry.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (1.5V 4.5V) reduces this device's overall power consumption.

DMN3115UDM-7 Features


a continuous drain current (ID) of 3.2A
a drain-to-source breakdown voltage of 30V voltage


DMN3115UDM-7 Applications


There are a lot of Diodes Incorporated
DMN3115UDM-7 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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