IRFI1310N Description
IRFI1310N is a 100v HEXFET? Power MOSFET. The HEXFET IRFI1310N from International Rectifier utilizes advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications
IRFI1310N Features
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS ?
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
Lead-Free
IRFI1310N Applications
Advanced driver assistance systems (ADAS)
Body electronics & lightingHybrid
electric & powertrain systems
Infotainment & cluster
Appliances
Building automation
