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FDD5614P

FDD5614P

FDD5614P

ON Semiconductor

FDD5614P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDD5614P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 9 hours ago)
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2005
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 100MOhm
Subcategory Other Transistors
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Current Rating-15A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Voltage 60V
Power Dissipation-Max 3.8W Ta 42W Tc
Element ConfigurationSingle
Current 15A
Operating ModeENHANCEMENT MODE
Power Dissipation42W
Case Connection DRAIN
Turn On Delay Time7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 759pF @ 30V
Current - Continuous Drain (Id) @ 25°C 15A Ta
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time10ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) -15A
Threshold Voltage -1.6V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Dual Supply Voltage -60V
Avalanche Energy Rating (Eas) 90 mJ
Max Junction Temperature (Tj) 175°C
Nominal Vgs -1.6 V
Height 2.39mm
Length 6.73mm
Width 6.6mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4633 items

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FDD5614P Product Details

FDD5614P Description


This 60V P-Channel MOSFET uses ON Semiconductor's high voltage PowerTrench process. It has been optimized for power management applications.



FDD5614P Features


  • Fast switching speed

  • High performance trench technology for extremely low RDS(ON)

  • High power and current handling capability

  • ROHS3 Compliant

  • No SVHC

  • Lead Free



FDD5614P Applications


  • DC/DC converter

  • Power management

  • Load switch

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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