Name: IRFZ48Z
Brand: Infineon Technologies
SKU: IRFZ48Z
Availability: InStock

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IRFZ48Z

Manufacturer part number:IRFZ48Z

Manufacturer:Infineon Technologies

Description:IRFZ48Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFZ48Z Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2003
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	91W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11m Ω @ 37A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1720pF @ 25V
Current - Continuous Drain (Id) @ 25°C	61A Tc
Gate Charge (Qg) (Max) @ Vgs	64nC @ 10V
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
JEDEC-95 Code	TO-263AB
Drain Current-Max (Abs) (ID)	61A
Drain-source On Resistance-Max	0.011Ohm
Pulsed Drain Current-Max (IDM)	240A
DS Breakdown Voltage-Min	55V
Avalanche Energy Rating (Eas)	120 mJ
RoHS Status	Non-RoHS Compliant

IRFZ48Z Product Details

IRFZ48Z Description

IRFZ48Z is a 55v HEXFET? Power MOSFET. Specifically designed for Automotive applications, this HEXFET? Power MOSFET IRFZ48Z utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.