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ISL9N303AS3ST

ISL9N303AS3ST

ISL9N303AS3ST

ON Semiconductor

MOSFET N-CH 30V 75A D2PAK

SOT-23

ISL9N303AS3ST Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK (TO-263AB)
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2002
Series UltraFET™
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 215W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.2mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 15V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 172nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
In-Stock:4151 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.361554$1.361554
10$1.284485$12.84485
100$1.211779$121.1779
500$1.143187$571.5935
1000$1.078479$1078.479

About ISL9N303AS3ST

The ISL9N303AS3ST from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 30V 75A D2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the ISL9N303AS3ST, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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