IRFB33N15DPBF

Name: IRFB33N15DPBF
Brand: Infineon Technologies
SKU: IRFB33N15DPBF
Availability: InStock

new-10%

Manufacturer part number:IRFB33N15DPBF

Manufacturer:Infineon Technologies

Description:N-Channel Tube 56m Ω @ 20A, 10V ±30V 2020pF @ 25V 90nC @ 10V TO-220-3

Case Package:SOT-23

Datasheet:IRFB33N15DPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2000
Series	HEXFET®
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	56Ohm
Voltage - Rated DC	150V
Current Rating	33A
Number of Elements	1
Power Dissipation-Max	3.8W Ta 170W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.8W
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	56m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2020pF @ 25V
Current - Continuous Drain (Id) @ 25°C	33A Tc
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Rise Time	38ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	21 ns
Turn-Off Delay Time	23 ns
Continuous Drain Current (ID)	33A
Threshold Voltage	5.5V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	150V
Dual Supply Voltage	150V
Nominal Vgs	5.5 V
Height	15.24mm
Length	10.5156mm
Width	4.69mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free

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