RFP2N10L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
RFP2N10L Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
25W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1.05Ohm @ 2A, 5V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
200pF @ 25V
Current - Continuous Drain (Id) @ 25°C
2A Tc
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
5V
Vgs (Max)
±10V
RoHS Status
Non-RoHS Compliant
In-Stock:2779 items
RFP2N10L Product Details
RFP2N10L Description
The RFP2N10L is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers.
RFP2N10L Features
Can be Driven Directly from QMOS, NMOS, and TTL Circuits
Compatible with Automotive Drive Requirements
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
2A, 80V and 100V
rDS(ON) = 1.050
Design Optimized for 5V Gate Drives
RFP2N10L Applications
Programmable controllers
Automotive switching
Solenoid drivers
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