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IRFB33N15D

  • IRFB33N15D - IRFB33N15D datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
  • IRFB33N15D - IRFB33N15D datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

IRFB33N15D

IRFB33N15D

Infineon Technologies

IRFB33N15D datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFB33N15D Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2000
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.8W Ta 170W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 56m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2020pF @ 25V
Current - Continuous Drain (Id) @ 25°C 33A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 33A
Drain-source On Resistance-Max 0.056Ohm
Pulsed Drain Current-Max (IDM) 130A
DS Breakdown Voltage-Min 150V
Avalanche Energy Rating (Eas) 330 mJ
RoHS StatusNon-RoHS Compliant
In-Stock:4594 items

IRFB33N15D Product Details

IRFB33N15D Applications

High frequency DC-DC converters

Lead-Free


IRFB33N15D Benefits

Low Gate-to-Drain Charge to Reduce

Switching Losses

Fully Characterized Capacitance Including

Effective COSS to Simplify Design, (See

App. Note AN1001)

Fully Characterized Avalanche Voltage

and Current


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