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TSM2N7000KCT A3G

TSM2N7000KCT A3G

TSM2N7000KCT A3G

Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 60V 300MA TO92

SOT-23

TSM2N7000KCT A3G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature-55°C~150°C TJ
PackagingTape & Box (TB)
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 400mW Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7.32pF @ 25V
Current - Continuous Drain (Id) @ 25°C 300mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.4nC @ 4.5V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
RoHS StatusROHS3 Compliant
In-Stock:4650 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About TSM2N7000KCT A3G

The TSM2N7000KCT A3G from Taiwan Semiconductor Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CHANNEL 60V 300MA TO92.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the TSM2N7000KCT A3G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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