STB160N75F3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STB160N75F3 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
3.7MOhm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STB160N
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
330W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
330W
Turn On Delay Time
22 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4m Ω @ 60A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
6750pF @ 25V
Current - Continuous Drain (Id) @ 25°C
120A Tc
Gate Charge (Qg) (Max) @ Vgs
85nC @ 10V
Rise Time
65ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
100 ns
Continuous Drain Current (ID)
60A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
75V
Pulsed Drain Current-Max (IDM)
480A
Dual Supply Voltage
75V
Nominal Vgs
4 V
Height
4.6mm
Length
10.75mm
Width
10.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:1149 items
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Unit Price
Ext. Price
STB160N75F3 Product Details
STB160N75F3 Description
The STB160N75F3 N-channel enhancement mode Power MOSFET is the latest refinement of ST's STripFET? process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge.
STB160N75F3 Features
Ultra low on-resistance
100% Avalanche tested
ROHS3 Compliant
No SVHC
Lead Free
No Radiation Hardening
STB160N75F3 Applications
Switching applications
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
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