IRF9952TRPBF Description
In the new generation of hexadecimal transistors, rectifiers use advanced processing technology to achieve extremely low on-resistance per silicon area. Combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, it provides designers with an extremely efficient and reliable device for use in a variety of applications.The SO-8 has been modified through custom lead frames to enhance thermal characteristics and multi-chip capabilities, making it an ideal choice for a variety of powerapplications.Withtheseimprovementsmultiple devices that can be used to greatly reduce circuit board space. Infrared welding technology.
IRF9952TRPBF Features
Generation VTechnology Ultra Low On-Resistance
Dual N and P Channe MOSFET Surface Mount
Very Low Gate Charge and Switching Losses
Fully Avalanche Rated Lead-Free
IRF9952TRPBF Applications
it provides designers with an extremely efficient and reliable device for use in a variety of applications.
