FDC6327C Description
These Nipp channel 2.5V MOSFET are manufactured using an advanced PowerTritch process tailored to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are designed to provide excellent power consumption in a very small footprint and are suitable for impractical applications in larger and more expensive SO-8 and TSSOP-8 packages.
FDC6327C Features
N-Channel
?2.7A, 20V
?RDS(on) = 0.08|? @ VGS = 4.5V
?RDS(on) = 0.12|? @ VGS = 2.5V
P-Channel
?-1.6A, -20V
?RDS(on) = 0.17|? @ VGS = -4.5V
?RDS(on) = 0.25|? @ VGS = -2.5V
Fast switching speed.
Low gate charge.
High performance trench technology for extremelylow RDS(ON) .
SuperSOT? -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick).
FDC6327C Applications
This product is general usage and suitable for many different applications.
