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IRF9362TRPBF

IRF9362TRPBF

IRF9362TRPBF

Infineon Technologies

IRF9362TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

SOT-23

IRF9362TRPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2007
Series HEXFET®
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 21MOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation2W
Terminal FormGULL WING
Base Part Number IRF9362PBF
Number of Elements 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation2W
Turn On Delay Time5.2 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 21m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 2.4V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Rise Time5.9ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 53 ns
Turn-Off Delay Time 115 ns
Continuous Drain Current (ID) -8A
Threshold Voltage -1.8V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 64A
Avalanche Energy Rating (Eas) 94 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs -1.8 V
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:7374 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.08000$1.08
500$1.0692$534.6
1000$1.0584$1058.4
1500$1.0476$1571.4
2000$1.0368$2073.6
2500$1.026$2565

IRF9362TRPBF Product Details

IRF9362TRPBF Description


Alex Lidow co-invented the HexFET, a hexagonal type of Power MOSFET, at Stanford University in 1977, along with Tom Herman. The HexFET was commercialized by International Rectifier in 1978.

IRF9362TRPBFApplications


Charge and Discharge Switch for Notebook PC BatteryApplication

IRF9362TRPBFFeatures

Industry-Standard SO-8 Package

RoHS Compliant Containing no Leadno Bromide and no Halogen





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