IRF8788PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF8788PBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2005
Series
HEXFET®
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
2.8MOhm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
23 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2.8m Ω @ 24A, 10V
Vgs(th) (Max) @ Id
2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
5720pF @ 15V
Current - Continuous Drain (Id) @ 25°C
24A Ta
Gate Charge (Qg) (Max) @ Vgs
66nC @ 4.5V
Rise Time
24ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
11 ns
Turn-Off Delay Time
23 ns
Continuous Drain Current (ID)
24A
Threshold Voltage
1.8V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Dual Supply Voltage
30V
Avalanche Energy Rating (Eas)
230 mJ
Recovery Time
36 ns
Nominal Vgs
1.8 V
Height
1.5mm
Length
5mm
Width
4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:3886 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
IRF8788PBF Product Details
IRF8788PBF Description
IRF8788PBF is a kind of HEXFET? power MOSFET provided by Infineon Technologies utilizing the latest HEXFET Power MOSFET Silicon Technology. It is optimized for low RDS (on) and low gate charge for low conduction and switching losses in synchronous buck operation. As a result, it is well suited for high-efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications.
IRF8788PBF Features
Low gate charge
Low RDS (on)
Ultra-Low gate impedance
Available in the SO-8 package
Fully characterized avalanche voltage and current
IRF8788PBF Applications
High-efficiency DC-DC converters
Related Products
Similar Transistors - FETs, MOSFETs - Single from Infineon Technologies and other manufacturers
