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2SK3747

2SK3747

2SK3747

ON Semiconductor

2SK3747 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

2SK3747 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Number of Pins 3
Operating Temperature150°C TJ
PackagingTray
Published 2004
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 10Ohm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 3W Ta 50W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation3W
Turn On Delay Time12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13 Ω @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 30V
Current - Continuous Drain (Id) @ 25°C 2A Ta
Gate Charge (Qg) (Max) @ Vgs 37.5nC @ 10V
Rise Time37ns
Drain to Source Voltage (Vdss) 1500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±35V
Fall Time (Typ) 59 ns
Turn-Off Delay Time 152 ns
Continuous Drain Current (ID) 2A
Threshold Voltage 3.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4A
Drain to Source Breakdown Voltage 1.5kV
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:1962 items

2SK3747 Product Details

2SK3747 Description


The 2SK3747 from ON Semiconductor is a 1500V, 2A, 13 TO-3PF-3L N-Channel Power MOSFET.



2SK3747 Features


  • Attachment workability is good for the Mica-less package

  • Avalanche resistance guarantee

  • Low ON-resistance.Low input capacitance.ultrahigh-speed switching

  • High reliability by the adoption of the HVP process



2SK3747 Applications


  • General usage and suitable for many different applications


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