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IRF8308MTR1PBF

IRF8308MTR1PBF

IRF8308MTR1PBF

Infineon Technologies

MOSFET N-CH 30V 27A MX

SOT-23

IRF8308MTR1PBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MX
Operating Temperature-40°C~150°C TJ
PackagingTape & Reel (TR)
Published 2013
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.8W Ta 89W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.5m Ω @ 27A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4404pF @ 15V
Current - Continuous Drain (Id) @ 25°C 27A Ta 150A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
In-Stock:3058 items

About IRF8308MTR1PBF

The IRF8308MTR1PBF from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 30V 27A MX.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF8308MTR1PBF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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