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IRLBA1304P

IRLBA1304P

IRLBA1304P

Infineon Technologies

IRLBA1304P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRLBA1304P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-273AA
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 1999
Series HEXFET®
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN OVER NICKEL
Additional FeatureAVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 250
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSIP-T3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 110A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7660pF @ 25V
Current - Continuous Drain (Id) @ 25°C 185A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 4.5V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Drain Current-Max (Abs) (ID) 95A
Drain-source On Resistance-Max 0.004Ohm
Pulsed Drain Current-Max (IDM) 740A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 1160 mJ
RoHS StatusNon-RoHS Compliant
In-Stock:1953 items

IRLBA1304P Product Details

IRLBA1304P Description


IRLBA1304P is a 40V HEXFET? Power MOSFET manufactured by Infineon. The HEXFET? is the most popular power MOSFET in the world. The Infineon particular HEXFET? IRLBA1304P is in the Super220TM and has the same outline and pinout as the industry-standard TO-220. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET IRLBA1304P is in the Super220TM package with 300w power dissipation.



IRLBA1304P Features


  • Logic-Level Gate Drive

  • Ultra-Low On-Resistance

  • Same outline as TO-220

  • Power Dissipation: 300W

  • Operating Junction and Storage Temperature Range: -55 to + 175℃



IRLBA1304P Applications


  • Battery management systems

  • Power tools

  • DC Drives

  • Electric toys

  • Hard switched and high-frequency circuits


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