IRF7832PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF7832PBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~155°C TJ
Packaging
Tube
Published
2005
Series
HEXFET®
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PDSO-G8
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Ta
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4m Ω @ 20A, 10V
Vgs(th) (Max) @ Id
2.32V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4310pF @ 15V
Current - Continuous Drain (Id) @ 25°C
20A Ta
Gate Charge (Qg) (Max) @ Vgs
51nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
JEDEC-95 Code
MS-012AA
Drain Current-Max (Abs) (ID)
20A
Drain-source On Resistance-Max
0.004Ohm
Pulsed Drain Current-Max (IDM)
160A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
260 mJ
RoHS Status
ROHS3 Compliant
In-Stock:2811 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.47000
$1.47
10
$1.30200
$13.02
100
$1.02920
$102.92
500
$0.79818
$399.09
IRF7832PBF Product Details
IRF7832PBF Description
IRF7832PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 30V. The operating temperature of the IRF7832PBF is -55??C~155??C TJ and its maximum power dissipation is 2.5W Ta. IRF7832PBF has 8 pins and it is available in Tube packaging way. The Drain to Source Voltage (Vdss) of IRF7832PBF is 30V.
IRF7832PBF Features
Very Low RDS(on) at 4.5V VGS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage and Current
20V VGS Max. Gate Rating
100% tested for Rg
IRF7832PBF Applications
Synchronous MOSFET for Notebook Processor Power
Synchronous Rectifier MOSFET for Isolated DC-DC Converters in
Networking Systems
Lead-Free
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