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IRF7807D2

IRF7807D2

IRF7807D2

Infineon Technologies

MOSFET N-CH 30V 8.3A 8-SOIC

SOT-23

IRF7807D2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SO
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 1999
Series FETKY™
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 25mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8.3A Ta
Gate Charge (Qg) (Max) @ Vgs 17nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Vgs (Max) ±12V
FET Feature Schottky Diode (Isolated)
RoHS StatusNon-RoHS Compliant
In-Stock:1566 items

Pricing & Ordering

QuantityUnit PriceExt. Price
665$1.22430$814.1595

About IRF7807D2

The IRF7807D2 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 30V 8.3A 8-SOIC.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF7807D2, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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