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IPB13N03LB G

IPB13N03LB G

IPB13N03LB G

Infineon Technologies

MOSFET N-CH 30V 30A TO-263

SOT-23

IPB13N03LB G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2006
Series OptiMOS™
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 52W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12.5m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 20μA
Input Capacitance (Ciss) (Max) @ Vds 1355pF @ 15V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
In-Stock:3405 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.467540$0.46754
10$0.441076$4.41076
100$0.416109$41.6109
500$0.392556$196.278
1000$0.370335$370.335

About IPB13N03LB G

The IPB13N03LB G from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 30V 30A TO-263.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPB13N03LB G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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