IRF7779L2TR1PBF Description
The IRF7779L2TR/TR1PbF combines the most recent HEXFET? Power MOSFET Silicon technology with cutting-edge DirectFETTM packaging to provide a package with a footprint that is smaller than a D2 PAK and a profile that is only 0.7 mm with the lowest on-state resistance possible. When application note AN-1035 detailing the manufacturing processes and methods is adhered to, the DirectFET package is compatible with current layout geometries used in power applications, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques. Dual-sided cooling is possible with the DirectFET package, which maximizes heat transmission in power systems.
Applications requiring synchronous rectification and high frequency switching are best served by the IRF7779L2TR/TR1PbF. Low temperatures are made possible by the device's reduced overall losses and high level of thermal performance.
IRF7779L2TR1PBF Features
RoHS Compliant, Halogen Free
Lead-Free (Qualified up to 260°C Reflow)
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
Industrial Qualified
IRF7779L2TR1PBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
