IRF7493PBF Description
N-channel devices are available in surface mount and lead-free packages in the Infineon line of discrete HEXFET? power MOSFETs. Moreover, there are form factors that can handle virtually any board layout and thermal design difficulty. Conduction losses are reduced by the across-the-board norm on resistance, enabling designers to provide systems with the highest possible efficiency.
IRF7493PBF Features
Drain to Source Voltage (Vdss): 80V
DS Breakdown Voltage-Min: 80V
Power Dissipation-Max: 2.5W Tc
Drain Current-Max (Abs) (ID): 9.3A
IRF7493PBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
